a d v a n c e d s e m i c o n d u c t o r, i n c. rev. c 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv ceo i c = 100 ma 25 v bv ces i c = 100 ma 55 v bv ebo i e = 5.0 ma 3.5 v h fe v ce = 5.0 v i c = 1.0 a 20 100 --- c ob v cb = 28 v f = 1.0 mhz 3.5 5 pf p g c p out v cc = 28 v p out = 110 w f = 860 mhz i cq = 2x200 ma 8.5 55 175 11 58 db % w v cc = 28 v p out = 175 w f = 860 mhz i cq = 2x200 ma 5:1 --- npn silicon rf power transistor PTB20101 description: the asi PTB20101 is designed for general purpose class ab power amplifier applications up to 860 mhz. features: ? 175 w, 470-860 mhz ? silicon nitride passivated ? omnigold ? metalization system maximum ratings i c 20 a v cbo 65 v p diss 330 w @ t c = 25 c t j -40 c to +150 c t stg -40 c to +150 c jc 0.53 c/w package style .860 4l flg 1,5 = collector 3 = emitter 2,4 = base
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